Graphene device and method of manufacturing the same
US8101980B2 · kind B2 · utility
9Cited by
2References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2010 |
| Grant date | Jan 24, 2012 |
| Priority date | — |
| Expiry date | Aug 25, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6741
Abstract
Provided is a graphene device and a method of manufacturing the same. The graphene device may include an upper oxide layer on at least one embedded gate, and a graphene channel and a plurality of electrodes on the upper oxide layer. The at least one embedded gate may be formed on the substrate. The graphene channel may be formed on the plurality of electrodes, or the plurality of electrodes may be formed on the graphene channel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.