Resistance memory element, method of manufacturing resistance memory element and semiconductor memory device
US8102003B2 · kind B2 · utility
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Key dates
| Filing date | May 28, 2009 |
| Grant date | Jan 24, 2012 |
| Priority date | — |
| Expiry date | Jul 13, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
A resistance memory element which memorizes a high resistance state and a low resistance state and is switched between the high resistance state and the low resistance state by an application of a voltage includes a first electrode layer of titanium nitride film, a resistance memory layer formed on the first electrode layer and formed of titanium oxide having a crystal structure of rutile phase, and a second electrode layer formed on the resistance memory layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.