Semiconductor device having IGBT and diode

US8102025B2 · kind B2 · utility

Assignee

• DENSO CORPORATION · JP

Inventors

• Yoshihiko Ozeki · Miyoshi, JP
• Norihito Tokura · Okazaki, JP
• Yukio Tsuzuki · Ebeye, US

Key dates

• Filing date: Feb 22, 2007
• Grant date: Jan 24, 2012
• Expiry date: May 9, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D12/441

Abstract

A semiconductor device includes: a semiconductor substrate; a IGBT region including a first region on a first surface of the substrate and providing a channel-forming region and a second region on a second surface of the substrate and providing a collector; a diode region including a third region on the first surface and providing an anode or a cathode and a fourth region on the second surface and providing the anode or the cathode; a periphery region including a fifth region on the first surface and a sixth region on the second surface. The first, third and fifth regions are commonly and electrically coupled, and the second, fourth and sixth regions are commonly and electrically coupled with one another.