Norihito Tokura
71Patents
24h-index
77Co-inventors
91Inventor score
Filing activity: Jul 24, 1980 → Nov 19, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5976936A | Silicon carbide semiconductor device | Emerging Cross-Sectional Technologies | 206 | Expired |
| US5915180A | Process for producing a semiconductor device having a single thermal oxidizing step | Emerging Cross-Sectional Technologies | 154 | Expired |
| US6020600A | Silicon carbide semiconductor device with trench | Emerging Cross-Sectional Technologies | 134 | Expired |
| US6133587A | Silicon carbide semiconductor device and process for manufacturing same | Electricity | 99 | Expired |
| US5519245A | Insulated gate bipolar transistor with reverse conducting current | Electricity | 94 | Expired |
| US6072240A | Semiconductor chip package | Electricity | 69 | Expired |
| US5744826A | Silicon carbide semiconductor device and process for its production | Emerging Cross-Sectional Technologies | 64 | Expired |
| US5543703A | Generator motor for vehicles | Emerging Cross-Sectional Technologies | 61 | Expired |
| US6982459B2 | Semiconductor device having a vertical type semiconductor element | Electricity | 57 | Expired |
| US5780953A | Alternator | Emerging Cross-Sectional Technologies | 49 | Expired |
| US4739183A | Local area network for vehicle | Emerging Cross-Sectional Technologies | 46 | Expired |
| US4608958A | Load reactance element driving device | Emerging Cross-Sectional Technologies | 41 | Expired |
| US5696396A | Semiconductor device including vertical MOSFET structure with suppressed parasitic diode operation | Electricity | 41 | Expired |
| US5460985A | Production method of a verticle type MOSFET | Emerging Cross-Sectional Technologies | 39 | Expired |
| US6448645B1 | Semiconductor device | Electricity | 39 | Expired |
| US5780324A | Method of manufacturing a vertical semiconductor device | Electricity | 38 | Expired |
| US6015737A | Production method of a vertical type MOSFET | Electricity | 36 | Expired |
| US5608616A | Power converter | Emerging Cross-Sectional Technologies | 32 | Expired |
| US5776812A | Manufacturing method of semiconductor device | Electricity | 32 | Expired |
| US8076718B2 | Insulated gate semiconductor device and method for producing the same | Electricity | 30 | Active |
| US4537172A | Fuel supply control apparatus for an internal-combustion engine | Emerging Cross-Sectional Technologies | 28 | Expired |
| US8102025B2 | Semiconductor device having IGBT and diode | Electricity | 25 | Active |
| US6639260B2 | Semiconductor device having a vertical semiconductor element | Electricity | 25 | Expired |
| US5723376A | Method of manufacturing SiC semiconductor device having double oxide film formation to reduce film defects | Emerging Cross-Sectional Technologies | 24 | Expired |
| US4644212A | Power supply for piezoelectric-element driving device | Emerging Cross-Sectional Technologies | 23 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.