Semiconductor device having pads and which minimizes defects due to bonding and probing processes
US8102056B2 · kind B2 · utility
3Cited by
13References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2006 |
| Grant date | Jan 24, 2012 |
| Priority date | — |
| Expiry date | Apr 1, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a semiconductor substrate; a first interlayer insulating film formed over the semiconductor substrate; a pad formed above the first interlayer insulating film; and a plurality of first interconnects spaced apart from each other in a portion of the first interlayer insulating film located below the pad. Below the pad, the first interconnects are formed in quadrangular plan shapes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.