DC brushed motor drive with circuit to reduce di/dt and EMI, for MOSFET Vth detection, voltage source detection, and overpower protection
US8102192B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2008 |
| Grant date | Jan 24, 2012 |
| Priority date | — |
| Expiry date | Jul 28, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/0822
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A gate driver for performing gate shaping on a first transistor of having gate, source, and drain terminals, the first transistor being selected from a switching stage of a power switching circuit having high- and low-side transistors series connected at a switching node for driving a load. The gate driver includes the following steps: upon receipt of an ON pulse pre-charging the gate terminal until gate to source terminal voltage equals Vth, controlling the di/dt(ON) flowing in the first transistor while free wheeling current is flowing in a second transistor of the switching stage, and controlling the dv/dt(ON) of the first transistor while a charge on the gate terminal is present; and upon receipt of an OFF pulse controlling the dv/dt(OFF) of the first transistor until free wheeling current is flowing in the second transistor, and controlling the di/dt(OFF) flowing in the first transistor while the gate to source terminal voltage equals Vth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.