VLN biasing scheme to achieve low vertical shading for high-speed and large-format CMOS image sensors with top/bottom readout scheme
US8102451B2 · kind B2 · utility
4Cited by
3References
22Claims
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Key dates
| Filing date | Nov 4, 2008 |
| Grant date | Jan 24, 2012 |
| Priority date | — |
| Expiry date | Oct 18, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/78
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A VLN biasing scheme implemented in an image sensor with top/bottom readout. A first and second current sink coupled to the top of a first column of pixels and a second column of pixels respectively. A third and fourth current sink coupled to the bottom of a first column of pixels and a second column of pixels respectively. During column readout, each current sink sinks an equal amount of current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.