Unidirectional spin torque transfer magnetic memory cell structure
US8102700B2 · kind B2 · utility
63Cited by
25References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2008 |
| Grant date | Jan 24, 2012 |
| Priority date | — |
| Expiry date | May 15, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Spin torque transfer magnetic random access memory devices configured to be programmed unidirectionally and methods of programming such devices. The devices include memory cells having two pinned layers and a free layer therebetween. By utilizing two pinned layers, the spin torque effect on the free layer from each of the two pinned layers, respectively, allows the memory cells to be programmed with unidirectional currents.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.