Patent · US Active

System for generating and optimizing mask assist features based on hybrid (model and rules) methodology

US8103979B2 · kind B2 · utility

1Cited by
6References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 20, 2008
Grant dateJan 24, 2012
Priority date—
Expiry dateNov 10, 2029

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F1/36
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

An optimal assist feature rules set for an integrated circuit design layout is created using inverse lithography. The full chip layout is lithographically simulated, and printability failure areas are determined. The features are analyzed for feature layout patterns, and inverse lithography is performed on the unique feature layouts to form assist features. The resulting layout of assist features is analyzed to create an assist feature rules set. The rules can then be applied to a photomask patterned with the integrated circuit design layout to print optimal assist features. The resulting photomask may be used to form an integrated circuit on a semiconductor substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.