In via formed phase change memory cell with recessed pillar heater

US8105859B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Matthew J. Breitwisch · Yorktown Heights, US
• Roger W. Cheek · Somers, US
• Eric A. Joseph · White Plains, US
• Chung H. Lam · Williston, US
• Alejandro G. Schrott · New York, US

Key dates

• Filing date: Sep 9, 2009
• Grant date: Jan 31, 2012
• Expiry date: Nov 10, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B63/30

Abstract

A method for fabricating a phase change memory device including a plurality of in via phase change memory cells includes forming pillar heaters formed of a conductive material along a contact surface of a substrate corresponding to each of an array of conductive contacts to be connected to access circuitry, forming a dielectric layer along exposed areas of the substrate surrounding the pillar heaters, forming an interlevel dielectric (ILD) layer above the dielectric layer, etching a via to the dielectric layer, each via corresponding to each of pillar heater such that an upper surface of each pillar heater is exposed within each via, recessing each pillar heater, depositing phase change material in each via on each recessed pillar heater, recessing the phase change material within each via, and forming a top electrode within the via on the phase change material.