Post etch dielectric film re-capping layer
US8105947B2 · kind B2 · utility
1Cited by
5References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2009 |
| Grant date | Jan 31, 2012 |
| Priority date | — |
| Expiry date | Dec 13, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for improving post etch in via or trench formation in semiconductor devices. A preferred embodiment comprises forming a re-capping layer over a dielectric film following an initial etch to form a feature in the dielectric film, followed by additional etch and etch back processing steps. The re-capping method provides protection for underlying films and prevents film damage post etch. Uniform feature profiles are maintained and critical dimension uniformity is obtained by use of the methods of the invention. The time dependent dielectric breakdown performance is increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.