Resistance change element and method of manufacturing the same
US8106377B2 · kind B2 · utility
3Cited by
3References
3Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 18, 2009 |
| Grant date | Jan 31, 2012 |
| Priority date | — |
| Expiry date | Feb 5, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a resistance change element (ReRAM) storing data by utilizing change in resistance of a resistance change element, the resistance change element is configured of a lower electrode made of a noble metal such as Pt, a transition metal film made of a transition metal such as Ni, a transition metal oxide film made of a transition metal oxide such as NiOx, and a lower electrode made of a noble metal such as Pt.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.