Bipolar device having improved capacitance
US8106480B2 · kind B2 · utility
0Cited by
14References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 5, 2010 |
| Grant date | Jan 31, 2012 |
| Priority date | — |
| Expiry date | Jan 5, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/401
Abstract
The invention, in one aspect, provides a semiconductor device that comprises a collector located in a semiconductor substrate and an isolation region located under the collector, wherein a peak dopant concentration of the isolation region is separated from a peak dopant concentration of the collector that ranges from about 0.9 microns to about 2.0 microns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.