Copper damascene and dual damascene interconnect wiring

US8106513B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Jeffrey P. Gambino · Gresham, US
• William R. Hill · Binghamton, US
• Kenneth E. McAvey, Jr. · Winooski, US
• Thomas L. McDevitt · Underhill, US
• Anthony K. Stamper · Williston, US
• Arthur C. Winslow · South Burlington, US
• Robert Zwonik · Colchester, US

Key dates

• Filing date: Nov 9, 2009
• Grant date: Jan 31, 2012
• Expiry date: Dec 20, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76834
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A copper corrosion resistant integrated circuit. The integrated circuit including: a substrate; a copper diffusion barrier layer on the substrate; a dielectric layer on a top surface of the copper diffusion barrier layer; a copper damascene or dual damascene wire in the dielectric layer, a top surface of the copper damascene or dual damascene wire coplanar with a top surface of the dielectric layer; a first capping layer on the top surface of the wire and the top surface of the dielectric layer; and a second capping layer on a top surface of the first capping layer.