Read mode for flash memory
US8107294B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2010 |
| Grant date | Jan 31, 2012 |
| Priority date | — |
| Expiry date | Mar 24, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/26
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for reading a nonvolatile memory array including an array of memory cells, each memory cell including a substrate, a control gate, a charge storage element, a source region and a drain region, includes receiving, at an address register, a read command including an address for a memory cell in the array of memory cells and an indication regarding whether the read command is a full page read command or a partial page read command. A starting address for a page including the received address is identified, wherein the page includes multiple rows of memory cells in the array of memory cells. The address register is reset to the starting address for the page. It is determined whether all memory cells in the page are non-programmed. Data indicative of a non-programmed state of the page is output if it is determined that all memory cells in the page are non-programmed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.