Nonvolatile memory device and read method thereof
US8107295B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2009 |
| Grant date | Jan 31, 2012 |
| Priority date | — |
| Expiry date | Jul 31, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An object of the present inventive concept is providing a nonvolatile memory device having improved reliability by compensating a threshold voltage of a flash memory cell.A nonvolatile memory device according to the present inventive concept includes a memory cell array connected to a plurality of word lines; and a voltage generator for supplying a select read voltage to a select word line and an unselect read voltage to an unselect word line among the plurality of word lines when a read operation is performed. The voltage generator generates the unselect read voltage having a different level according to whether the unselect word line is adjacent to the select word line or not.A nonvolatile memory device according to the present inventive concept compensates a threshold voltage increased or decreased due to various causes. According to the present inventive concept, reliability of a nonvolatile memory device is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.