Surface treatment method of group III nitride semiconductor and manufacturing method of the group III nitride semiconductor
US8110424B2 · kind B2 · utility
2Cited by
4References
14Claims
0Family size
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Key dates
| Filing date | Apr 7, 2009 |
| Grant date | Feb 7, 2012 |
| Priority date | — |
| Expiry date | Jul 20, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/817
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.