Multiple Vt field-effect transistor devices

US8110467B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Josephine B. Chang · Mahopac, US
• Leland Chang · New York, US
• Renee T. Mo · Yorktown Heights, US
• Vijay Narayanan · New York, US
• Jeffrey W. Sleight · Ridgefield, US

Key dates

• Filing date: Apr 21, 2009
• Grant date: Feb 7, 2012
• Expiry date: Jan 28, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/024

Abstract

Multiple threshold voltage (Vt) field-effect transistor (FET) devices and techniques for the fabrication thereof are provided. In one aspect, a FET device is provided including a source region; a drain region; at least one channel interconnecting the source and drain regions; and a gate, surrounding at least a portion of the channel, configured to have multiple threshold voltages due to the selective placement of at least one band edge metal throughout the gate.