Inventor · New York, NY, US

Vijay Narayanan

256Patents

19h-index

234Co-inventors

89Inventor score

Filing activity: Jul 5, 2001 → Feb 21, 2025

Most-cited inventions

Patent	Title	Area	Cited by	Status
US9748145B1	Semiconductor devices with varying threshold voltage and fabrication methods thereof	Electricity	464	Active
US6921711B2	Method for forming metal replacement gate of high performance	Electricity	119	Expired
US7488656B2	Removal of charged defects from metal oxide-gate stacks	Electricity	73	Expired
US6982230B2	Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures	Electricity	65	Expired
US9997519B1	Dual channel structures with multiple threshold voltages	Electricity	61	Active
US7105889B2	Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high k dielectrics	Electricity	61	Expired
US7855105B1	Planar and non-planar CMOS devices with multiple tuned threshold voltages	Electricity	60	Active
US7242055B2	Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxide	Electricity	38	Expired
US7432567B2	Metal gate CMOS with at least a single gate metal and dual gate dielectrics	Electricity	37	Active
US6852575B2	Method of forming lattice-matched structure on silicon and structure formed thereby	Electricity	35	Expired
US7696036B2	CMOS transistors with differential oxygen content high-k dielectrics	Electricity	26	Active
US7479683B2	Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectrics	Electricity	25	Expired
US7071122B2	Field effect transistor with etched-back gate dielectric	Electricity	25	Expired
US7989902B2	Scavenging metal stack for a high-k gate dielectric	Electricity	24	Active
US7718496B2	Techniques for enabling multiple Vt devices using high-K metal gate stacks	Electricity	24	Active
US7838908B2	Semiconductor device having dual metal gates and method of manufacture	Electricity	23	Active
US7870151B2	Fast accurate fuzzy matching	Physics	22	Active
US8110467B2	Multiple Vt field-effect transistor devices	Electricity	21	Active
US7863126B2	Fabrication of a CMOS structure with a high-k dielectric layer oxidizing an aluminum layer in PFET region	Electricity	20	Active
US9793397B1	Ferroelectric gate dielectric with scaled interfacial layer for steep sub-threshold slope field-effect transistor	Electricity	18	Active
US8741713B2	Reliable physical unclonable function for device authentication	Electricity	18	Active
US7655994B2	Low threshold voltage semiconductor device with dual threshold voltage control means	Electricity	17	Expired
US7067422B2	Method of forming a tantalum-containing gate electrode structure	Electricity	17	Expired
US8420473B2	Replacement gate devices with barrier metal for simultaneous processing	Electricity	16	Active
US7750418B2	Introduction of metal impurity to change workfunction of conductive electrodes	Electricity	16	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.