Semiconductor device comprising multilayer dielectric film and related method
US8110473B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2009 |
| Grant date | Feb 7, 2012 |
| Priority date | — |
| Expiry date | Dec 10, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/033
Abstract
A semiconductor device including a multilayer dielectric film and a method for fabricating the semiconductor device are disclosed. The multilayer dielectric film includes a type-one dielectric film having a tetragonal crystalline structure, wherein the type-one dielectric film comprises a first substance. The multilayer dielectric film also comprises a type-two dielectric film also having a tetragonal crystalline structure, wherein the type-two dielectric film comprises a second substance different from the first substance and a dielectric constant of the type-two dielectric film is greater than a dielectric constant of the type-one dielectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.