Method of forming a contact structure
US8110499B2 · kind B2 · utility
4Cited by
0References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 7, 2009 |
| Grant date | Feb 7, 2012 |
| Priority date | — |
| Expiry date | Jul 14, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/09701
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An insulation layer may be formed on an object having a contact region. The insulation layer may be partially etched to form an opening exposing the contact region. A material layer including silicon and oxygen may be formed on the exposed contact region. A metal layer may be formed on the material layer including silicon and oxygen. The material layer including silicon and oxygen may be reacted with the metal layer to form a metal oxide silicide layer at least on the contact region. A conductive layer may be formed on the metal oxide silicide layer to fill up the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.