Metal-insulator-semiconductor tunneling contacts having an insulative layer disposed between source/drain contacts and source/drain regions
US8110877B2 · kind B2 · utility
100Cited by
8References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2008 |
| Grant date | Feb 7, 2012 |
| Priority date | — |
| Expiry date | Oct 1, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A contact to a source or drain region. The contact has a conductive material, but that conductive material is separated from the source or drain region by an insulator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.