Inventor · Beaverton, OR, US

Gilbert Dewey

398Patents
15h-index
160Co-inventors
89Inventor score

Filing activity: Jun 30, 2004 → Jan 22, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US8110877B2 Metal-insulator-semiconductor tunneling contacts having an insulative layer disposed between source/drain contacts and source/drain regions Electricity 100 Active
US8890264B2 Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface Electricity 88 Active
US9123567B2 CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture Electricity 57 Active
US7074680B2 Method for making a semiconductor device having a high-k gate dielectric Electricity 48 Expired
US8283653B2 Non-planar germanium quantum well devices Electricity 36 Active
US8952541B2 Method of fabricating metal-insulator-semiconductor tunneling contacts using conformal deposition and thermal growth processes Electricity 34 Active
US8765563B2 Trench confined epitaxially grown device layer(s) Electricity 34 Active
US7323423B2 Forming high-k dielectric layers on smooth substrates Electricity 31 Expired
US7759142B1 Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains Electricity 25 Active
US8785909B2 Non-planar semiconductor device having channel region with low band-gap cladding layer Electricity 24 Active
US8575596B2 Non-planar germanium quantum well devices Electricity 20 Active
US7947971B2 Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains Electricity 20 Active
US9240410B2 Group III-N nanowire transistors Emerging Cross-Sectional Technologies 20 Active
US9123790B2 Contact techniques and configurations for reducing parasitic resistance in nanowire transistors Emerging Cross-Sectional Technologies 20 Active
US7465976B2 Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions Electricity 19 Expired
US7915642B2 Apparatus and methods for forming a modulation doped non-planar transistor Electricity 14 Active
US8148772B2 Recessed channel array transistor (RCAT) structures Electricity 14 Active
US8115235B2 Modulation-doped halo in quantum well field-effect transistors, apparatus made therewith, and methods of using same Electricity 14 Active
US7531404B2 Semiconductor device having a metal gate electrode formed on an annealed high-k gate dielectric layer Electricity 13 Active
US8415751B2 Method to reduce contact resistance of N-channel transistors by using a III-V semiconductor interlayer in source and drain Electricity 13 Active
US9245989B2 High voltage field effect transistors Electricity 13 Active
US8936976B2 Conductivity improvements for III-V semiconductor devices Electricity 13 Active
US8785907B2 Epitaxial film growth on patterned substrate Electricity 12 Active
US9634007B2 Trench confined epitaxially grown device layer(s) Electricity 12 Active
US8258498B2 Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains Electricity 12 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.