Patent · US Active

Write-pattern determination for maskless lithography

US8111380B2 · kind B2 · utility

4Cited by
13References
33Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 8, 2008
Grant dateFeb 7, 2012
Priority date
Expiry dateSep 3, 2029

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F7/70508
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A method for generating a write pattern to be used in a maskless-lithography process is described. During the method, a computer system determines a one-to-one correspondence between pixels in the write pattern and at least a subset of elements in a spatial-light modulator used in the maskless-lithography process. Furthermore, the computer system generates the write pattern. Note that the write pattern includes features corresponding to at least the subset of elements in the spatial-light modulator, and the generating is in accordance with a characteristic dimension of an element in the spatial-light modulator and a target pattern that is to be printed on a semiconductor wafer during the maskless-lithography process.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.