Programming MRAM cells using probability write
US8111544B2 · kind B2 · utility
4Cited by
1References
20Claims
0Family size
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Key dates
| Filing date | Nov 13, 2009 |
| Grant date | Feb 7, 2012 |
| Priority date | — |
| Expiry date | Mar 18, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of writing a magneto-resistive random access memory (MRAM) cell includes providing a writing pulse to write a value to the MRAM cell; and verifying a status of the MRAM cell immediately after the step of providing the first writing pulse. In the event of a write failure, the value is rewritten into the MRAM cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.