Dynamic wordline start voltage for nand programming
US8111549B2 · kind B2 · utility
15Cited by
3References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 13, 2009 |
| Grant date | Feb 7, 2012 |
| Priority date | — |
| Expiry date | Mar 17, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3418
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a method of programming an MLC NAND flash memory device comprising: selecting a start value for a program voltage for a lower page; incrementing said program voltage to program said lower page; verifying a threshold voltage; determining said program voltage to achieve a desired value for said threshold voltage; applying an offset to said program voltage; and obtaining a start value for said program voltage for an upper page.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.