Aaron Yip
150Patents
12h-index
64Co-inventors
89Inventor score
Filing activity: Dec 29, 1995 → May 9, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7345924B2 | Programming memory devices | Physics | 56 | Active |
| US7447847B2 | Memory device trims | Physics | 56 | Expired |
| US7269066B2 | Programming memory devices | Physics | 56 | Expired |
| US9941209B2 | Conductive structures, systems and devices including conductive structures and related methods | Electricity | 49 | Active |
| US9589978B1 | Memory devices with stairs in a staircase coupled to tiers of memory cells and to pass transistors directly under the staircase | Electricity | 45 | Active |
| US7778086B2 | Erase operation control sequencing apparatus, systems, and methods | Physics | 31 | Active |
| US9165937B2 | Semiconductor devices including stair step structures, and related methods | Electricity | 20 | Active |
| US7123521B1 | Random cache read | Physics | 18 | Expired |
| US9070442B2 | Memory devices with local and global devices at substantially the same level above stacked tiers of memory cells and methods | Emerging Cross-Sectional Technologies | 17 | Active |
| US8064252B2 | Multi-pass programming in a memory device | Physics | 17 | Active |
| US8111549B2 | Dynamic wordline start voltage for nand programming | Physics | 15 | Active |
| US5656949A | Architecture for FPGAs | Electricity | 12 | Expired |
| US5801934A | Charge pump with reduced power consumption | Electricity | 12 | Expired |
| US7924617B2 | Selective threshold voltage verification and compaction | Physics | 11 | Active |
| US5920506A | Method and apparatus for bulk preprogramming flash memory cells with minimal source and drain currents | Physics | 10 | Expired |
| US10170188B1 | 3D memory device including shared select gate connections between memory blocks | Electricity | 10 | Active |
| US5999425A | Charge pump architecture for integrated circuit | Electricity | 10 | Expired |
| US9659950B2 | Semiconductor devices including stair step structures, and related methods | Electricity | 10 | Active |
| US10978478B1 | Block-on-block memory array architecture using bi-directional staircases | Electricity | 9 | Active |
| US7254049B2 | Method of comparison between cache and data register for non-volatile memory | Physics | 9 | Active |
| US11545456B2 | Microelectronic devices, electronic systems having a memory array region and a control logic region, and methods of forming microelectronic devices | Electricity | 8 | Active |
| US9697907B2 | Apparatuses and methods using dummy cells programmed to different states | Physics | 8 | Active |
| US9589644B2 | Reducing programming disturbance in memory devices | Physics | 8 | Active |
| US8547750B2 | Methods and devices for memory reads with precharged data lines | Physics | 8 | Active |
| US7505323B2 | Programming memory devices | Physics | 7 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.