2-dimensional line-defects controlled silicon ingot, wafer and epitaxial wafer, and manufacturing process and apparatus therefor
US8114215B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2008 |
| Grant date | Feb 14, 2012 |
| Priority date | — |
| Expiry date | Sep 25, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1068
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention reports a defect that has not been reported, and discloses a defect-controlled silicon ingot, a defect-controlled wafer, and a process and apparatus for manufacturing the same. The new defect is a crystal defect generated when a screw dislocation caused by a HMCZ (Horizontal Magnetic Czochralski) method applying a strong horizontal magnetic field develops into a jogged screw dislocation and propagates to form a cross slip during thermal process wherein a crystal is cooled. The present invention changes the shape and structure of an upper heat shield structure arranged between a heater and an ingot above a silicon melt, and controls initial conditions or operation conditions of a silicon single crystalline ingot growth process to reduce a screw dislocation caused by a strong horizontal magnetic field and prevent the screw dislocation from propagating into a cross slip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.