Methods of forming a non-volatile resistive oxide memory array
US8114468B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2008 |
| Grant date | Feb 14, 2012 |
| Priority date | — |
| Expiry date | Nov 9, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/947
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a non-volatile resistive oxide memory array includes forming a plurality of one of conductive word lines or conductive bit lines over a substrate. Metal oxide-comprising material is formed over the plurality of said one of the word lines or bit lines. A series of elongated trenches is provided over the plurality of said one of the word lines or bit lines. A plurality of self-assembled block copolymer lines is formed within individual of the trenches in registered alignment with and between the trench sidewalls. A plurality of the other of conductive word lines or conductive bit lines is provided from said plurality of self-assembled block copolymer lines to form individually programmable junctions comprising said metal oxide-comprising material where the word lines and bit lines cross one another.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.