Method for self-limiting deposition of one or more monolayers

US8114480B2 · kind B2 · utility

Assignee

• Aixtron, Inc. · DE

Inventors

• Peter Baumann · Tirschenreuth, DE
• Johannes Lindner · Roetgen, DE

Key dates

• Filing date: Jun 14, 2007
• Grant date: Feb 14, 2012
• Expiry date: Mar 21, 2030

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/45553
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

The invention relates to a method for deposition of at least one layer containing at least one first component on at least one substrate in a process chamber, wherein first and second starting materials are introduced in gaseous form into the process chamber in alternation cyclically, at least the first starting material of which contains the first component, to deposit essentially only one layer of the first component in each cycle. To widen the spectrum of available starting materials suitable for the process, it is proposed that the first starting material shall consist of two β-diketones and one diene coordinated with one ruthenium atom, and a limiter shall be introduced into the process chamber simultaneously with or some time after the first starting material, such that deposition of the first component on the substrate is automatically concluded after the first layer is completed, wherein the limiter is or contains octane, butyl acetates, tetrahydrofuran, methanol, ethanol, isobutylamines, triethylamines, butanol, cyclohexane, isooctane, dioxane, dimethylformamide, pyridine and/or toluene.