Integrated high voltage capacitor having capacitance uniformity structures and a method of manufacture therefor
US8114731B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 24, 2008 |
| Grant date | Feb 14, 2012 |
| Priority date | — |
| Expiry date | Dec 18, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor, among other features, includes a first capacitor plate (120) located over or in a semiconductor substrate (105), and an insulator (130) located over the first capacitor plate (120), at least a portion of the insulator (130) comprising an interlevel dielectric layer (135, 138, 143, or 148). The integrated high voltage capacitor further includes capacitance uniformity structures (910) located at least partially within the insulator (130) and a second capacitor plate (160) located over the insulator (130).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.