Metal capacitor and method of making the same
US8114734B2 · kind B2 · utility
448Cited by
3References
9Claims
0Family size
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Inventor
Key dates
| Filing date | Oct 21, 2008 |
| Grant date | Feb 14, 2012 |
| Priority date | — |
| Expiry date | Jul 16, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a metal capacitor includes the following steps. A dielectric layer having a metal interconnection and a capacitor electrode is provided. Then, a treatment is performed to increase the dielectric constant of the dielectric layer surrounding the capacitor electrode. The treatment can be UV radiation, a plasma treatment or an ion implantation. Accordingly, the metal capacitor will have a higher capacitance and RC delay between the metal interconnection and the dielectric layer can be prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.