Method for doping non-planar transistors
US8114761B2 · kind B2 · utility
136Cited by
2References
10Claims
0Family size
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Key dates
| Filing date | Jul 26, 2010 |
| Grant date | Feb 14, 2012 |
| Priority date | — |
| Expiry date | Jul 26, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0241
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for doping a non-planar structure by forming a conformal doped silicon glass layer on the non-planar structure are disclosed. A substrate having the non-planar structure formed thereon is positioned in chemical vapor deposition process chamber to deposit a conformal SACVD layer of doped glass (e.g. BSG or PSG). The substrate is then exposed to RTP or laser anneal step to diffuse the dopant into the non-planar structure and the doped glass layer is then removed by etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.