Photoconductors for mid-/far-IR detection
US8115203B2 · kind B2 · utility
3Cited by
5References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 26, 2009 |
| Grant date | Feb 14, 2012 |
| Priority date | — |
| Expiry date | Jan 26, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/12
Abstract
An infrared photodiode structure is provided. The infrared photodiode structure includes a doped semiconductor layer having ions of certain conductivity. An active photodetecting region is positioned on the doped semiconductor layer for detecting an infrared light signal. The active photodetecting region includes one or more amorphous semiconductor materials so as to allow for high signal-to-noise ratio being achieved by invoking carrier hopping and band conduction, under dark and illuminated conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.