Modulation-doped halo in quantum well field-effect transistors, apparatus made therewith, and methods of using same

US8115235B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Ravi Pillarisetty · Portland, US
• Titash Rakshit · Austin, US
• Mantu K. Hudait · Portland, US
• Marko Radosavljevic · Portland, US
• Gilbert Dewey · Beaverton, US
• Benjamin Chu-Kung · Portland, US

Key dates

• Filing date: Feb 20, 2009
• Grant date: Feb 14, 2012
• Expiry date: Mar 2, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/68
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A quantum well (QW) layer is provided in a semiconductive device. The QW layer is provided with a beryllium-doped halo layer in a barrier structure below the QW layer. The semiconductive device includes InGaAs bottom and top barrier layers respectively below and above the QW layer. The semiconductive device also includes a high-k gate dielectric layer that sits on the InP spacer first layer in a gate recess. A process of forming the QW layer includes using an off-cut semiconductive substrate.