Patent · US Active

Fuse structure and method for manufacturing same

US8115274B2 · kind B2 · utility

7Cited by

27References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Josef Boeck · Putzbrunn, DE
Herbert Knapp · Munich, DE
Wolfgang Liebl · Bad Abbach, DE
Herbert Schaefer · Herdorf, DE

Key dates

Filing date	Sep 13, 2007
Grant date	Feb 14, 2012
Priority date	—
Expiry date	Jan 27, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A fuse structure includes a substrate, a fuse conductive trace disposed closer to a first chip surface than to a second chip surface facing away from the first chip surface, a metallization layer on the substrate disposed on a side of the fuse conductive trace facing away from the first chip surface, and a planar barrier multilayer assembly disposed between the fuse conductive trace and the metallization layer and including multiple barrier layers of different materials, wherein the fuse conductive trace, the metallization layer and the barrier multilayer assembly are arranged such that when cutting the fuse conductive trace and the barrier multilayer assembly, a first area of the metallization layer is electrically isolated from a second area of the metallization layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.