Non-polar III-V nitride material and production method
US8118934B2 · kind B2 · utility
6Cited by
3References
25Claims
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Key dates
| Filing date | Sep 26, 2007 |
| Grant date | Feb 21, 2012 |
| Priority date | — |
| Expiry date | Jun 17, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0265
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for growing flat, low defect density, and strain-free thick non-polar III-V nitride materials and devices on any suitable foreign substrates using a fabricated nano-pores and nano-network compliant layer with an HVPE, MOCVD, and integrated HVPE/MOCVD growth process in a manner that minimum growth will occur in the nano-pores is provided. The method produces nano-networks made of the non-polar III-V nitride material and the substrate used to grow it where the network is continuous along the surface of the template, and where the nano-pores can be of any shape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.