Electronic device including a magneto-resistive memory device and a process for forming the electronic device
US8119424B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2007 |
| Grant date | Feb 21, 2012 |
| Priority date | — |
| Expiry date | Jan 30, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A process of forming an electronic device can include forming a stack including a tunnel barrier layer. The tunnel barrier layer can have a ratio of the metal atoms to oxygen atoms of greater than a stoichiometric ratio, wherein the ratio has a particular value. The process can also include forming a gettering layer having a composition capable of gettering oxygen, and depositing an insulating layer over the gettering layer. The process can further include exposing the insulating layer to a temperature of at least approximately 60° C. In one embodiment, after such exposure, a portion of the gettering layer is converted to an insulating material. In another embodiment, an electronic device can include a magnetic tunnel junction and an adjacent insulating layer lying within an opening in another insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.