Method for forming conductive film, thin-film transistor, panel with thin-film transistor, and method for manufacturing thin-film transistor
US8119462B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 3, 2009 |
| Grant date | Feb 21, 2012 |
| Priority date | — |
| Expiry date | Jul 10, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A conductive film having high adhesion and low specific resistance is formed. A target containing copper as a main component is sputtered in vacuum ambience while an oxygen gas introduced, and then, a conductive film containing copper as a main component and additive metals, such as Ti or Zr, is formed. Such a conductive film has high adhesion to a silicon layer and a glass substrate and is hardly peeled off from the substrate. Furthermore, the specific resistance is low and the contact resistance to a transparent conductive film is also low. Thus, no deterioration in the electric characteristics occurs even when the conductive film is used for an electrode film. Accordingly, the conductive film formed by the present invention suited for TFT, and electrode films and barrier films of semiconductor elements, in particular.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.