Semiconductor substrate fabrication by etching of a peeling layer
US8119499B2 · kind B2 · utility
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5References
10Claims
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Key dates
| Filing date | Aug 24, 2006 |
| Grant date | Feb 21, 2012 |
| Priority date | — |
| Expiry date | Jul 30, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor substrate fabrication method according to the first aspect of this invention is characterized by including a preparation step of preparing an underlying substrate, a stacking step of stacking, on the underlying substrate, at least two multilayered films each including a peeling layer and a semiconductor layer, and a separation step of separating the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.