WAVESQUARE INC.
12Patents
12Active
12Granted
42Portfolio score
Filing activity: Aug 24, 2006 → Sep 4, 2013 · 11 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| USD703863S1 | Lighting elements | General | 6 | Active |
| USD711583S1 | Lighting element | General | 4 | Active |
| USD711581S1 | Lighting element | General | 3 | Active |
| US7829435B2 | Method for growth of GaN single crystal, method for preparation of GaN substrate, process for producing GaN-based element, and GaN-based element | Electricity | 1 | Active |
| US8963290B2 | Semiconductor device and manufacturing method therefor | Electricity | 1 | Active |
| USD703862S1 | Lighting elements | General | 1 | Active |
| US8119499B2 | Semiconductor substrate fabrication by etching of a peeling layer | Electricity | 0 | Active |
| USD711582S1 | Lighting element | General | 0 | Active |
| US9502603B2 | Vertically structured group III nitride semiconductor LED chip and method for manufacturing the same | Electricity | 0 | Active |
| US9012935B2 | Vertically structured group III nitride semiconductor LED chip and method for manufacturing the same | Electricity | 0 | Active |
| US8124504B2 | Method for growth of GaN single crystal, method for preparation of GaN substrate, process for producing GaN-based element, and GaN-based element | Electricity | 0 | Active |
| US8962362B2 | Vertically structured group III nitride semiconductor LED chip and method for manufacturing the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.