Method for chemical mechanical polishing a substrate
US8119529B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2009 |
| Grant date | Feb 21, 2012 |
| Priority date | — |
| Expiry date | May 1, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09G1/02
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method for chemical mechanical polishing of a substrate, comprising: providing a substrate, wherein the substrate comprises silicon dioxide; providing a chemical mechanical polishing composition, wherein the chemical mechanical polishing composition comprises: water, an abrasive; a diquaternary cation according to formula (I); and optionally a quaternary alkylammonium compound; providing a chemical mechanical polishing pad; creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate; and dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; wherein the chemical mechanical polishing composition has a pH of 2 to 6; wherein the chemical mechanical polishing composition exhibits a silicon dioxide removal rate of at least 1,500 Å/min.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.