Pattern formation in semiconductor fabrication
US8119533B2 · kind B2 · utility
2Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 31, 2009 |
| Grant date | Feb 21, 2012 |
| Priority date | — |
| Expiry date | Apr 4, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/952
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a semiconductor device. The device includes a substrate having a photo acid generator (PAG) layer on the substrate. The PAG layer is exposed to radiation. A photoresist layer is formed on the exposed PAG layer. The exposed PAG layer generates an acid. The acid decomposes a portion of the formed photoresist layer. In one embodiment, the PAG layer includes organic BARC. The decomposed portion of the photoresist layer may be used as a masking element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.