Trigate transistor having extended metal gate electrode

US8120073B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Titash Rakshit · Austin, US
• Stephen M. Cea · Hillsboro, US
• Jack T. Kavalieros · Portland, US
• Ravi Pillarisetty · Portland, US

Key dates

• Filing date: Dec 31, 2008
• Grant date: Feb 21, 2012
• Expiry date: Nov 15, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/024

Abstract

A trigate device having an extended metal gate electrode comprises a semiconductor body having a top surface and opposing sidewalls formed on a substrate, an isolation layer formed on the substrate and around the semiconductor body, wherein a portion of the semiconductor body remains exposed above the isolation layer, and a gate stack formed on the top surface and opposing sidewalls of the semiconductor body, wherein the gate stack extends a depth into the isolation layer, thereby causing a bottom surface of the gate stack to be below a top surface of the isolation layer.