Inventor · Hillsboro, OR, US

Stephen M. Cea

126Patents
15h-index
97Co-inventors
89Inventor score

Filing activity: Mar 31, 2003 → Jan 10, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US7154118B2 Bulk non-planar transistor having strained enhanced mobility and methods of fabrication Electricity 208 Expired
US8753942B2 Silicon and silicon germanium nanowire structures Electricity 131 Active
US7326634B2 Bulk non-planar transistor having strained enhanced mobility and methods of fabrication Electricity 68 Expired
US8211772B2 Two-dimensional condensation for uniaxially strained semiconductor fins Electricity 60 Active
US9129829B2 Silicon and silicon germanium nanowire structures Electricity 58 Active
US6982433B2 Gate-induced strain for MOS performance improvement Electricity 43 Expired
US8847281B2 High mobility strained channels for fin-based transistors Electricity 39 Active
US9224810B2 CMOS nanowire structure Electricity 32 Active
US8120073B2 Trigate transistor having extended metal gate electrode Electricity 27 Active
US7019326B2 Transistor with strain-inducing structure in channel Electricity 24 Expired
US9583491B2 CMOS nanowire structure Electricity 24 Active
US7781771B2 Bulk non-planar transistor having strained enhanced mobility and methods of fabrication Electricity 24 Active
US6936505B2 Method of forming a shallow junction Electricity 22 Expired
US7973389B2 Isolated tri-gate transistor fabricated on bulk substrate Electricity 22 Active
US9608059B2 Semiconductor device with isolated body portion Electricity 16 Active
US8269283B2 Methods and apparatus to reduce layout based strain variations in non-planar transistor structures Electricity 15 Active
US7045408B2 Integrated circuit with improved channel stress properties and a method for making it Electricity 14 Expired
US9224808B2 Uniaxially strained nanowire structure Electricity 13 Active
US8957476B2 Conversion of thin transistor elements from silicon to silicon germanium Electricity 12 Active
US8558279B2 Non-planar device having uniaxially strained semiconductor body and method of making same Electricity 11 Active
US9570614B2 Ge and III-V channel semiconductor devices having maximized compliance and free surface relaxation Electricity 11 Active
US9472613B2 Conversion of strain-inducing buffer to electrical insulator Electricity 11 Active
US7102141B2 Flash lamp annealing apparatus to generate electromagnetic radiation having selective wavelengths Electricity 11 Expired
US9129827B2 Conversion of strain-inducing buffer to electrical insulator Electricity 9 Active
US10304946B2 Vertical integration scheme and circuit elements architecture for area scaling of semiconductor devices Electricity 9 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.