Non-volatile memory device and method for fabricating non-volatile memory device
US8120089B2 · kind B2 · utility
7Cited by
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5Claims
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Key dates
| Filing date | Dec 30, 2009 |
| Grant date | Feb 21, 2012 |
| Priority date | — |
| Expiry date | Sep 26, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/27
Abstract
Provided are nonvolatile memory devices with a three-dimensional structure and methods of fabricating the same. The nonvolatile memory device includes conductive patterns three-dimensionally arranged on a semiconductor substrate, semiconductor patterns that extend from the semiconductor substrate and intersect one-side walls of the conductive patterns, charge storage layers interposed between the semiconductor patterns and one-side walls of the conductive patterns, and seed layer patterns interposed between the charge storage layers and one-side walls of the conductive patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.