Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate
US8120114B2 · kind B2 · utility
9Cited by
18References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2006 |
| Grant date | Feb 21, 2012 |
| Priority date | — |
| Expiry date | Aug 29, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76826
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one aspect, an apparatus may include a metal gate of a transistor. An etch stop layer may be selectively formed over the metal gate. The etch stop layer may include a metal compound. An insulating layer may be over the etch stop layer. A conductive structure may be included through the insulating layer to the metal gate. Methods of making such transistors are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.