Semiconductor device with metal gate
US8120117B2 · kind B2 · utility
10Cited by
3References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 1, 2009 |
| Grant date | Feb 21, 2012 |
| Priority date | — |
| Expiry date | Feb 5, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Gate electrode structures having a thin layer of ReO3 formed with high effective work function and high heat resistance are disclosed. The thin layer of ReO3 is formed by providing a semiconductor structure having an oxygen-containing metal alloy layer and a rhenium layer. A heat annealing step diffuses Re from the rhenium layer through the high-oxygen containing metal alloy layer to form a thin layer of ReO3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.