Magnetic random access memory and method of manufacturing the same
US8120127B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 7, 2008 |
| Grant date | Feb 21, 2012 |
| Priority date | — |
| Expiry date | Dec 24, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A domain wall motion type MRAM 100 has: a magnetic recording layer 10 that is a ferromagnetic layer; and a magnetic coupling layer 20 that is a ferromagnetic layer whose magnetization direction is fixed. The magnetic recording layer 10 has: a first region 10-1; a second region 10-2; and a magnetization switching region 10-3 connecting between the first region 10-1 and the second region 10-2. The first region 10-1 is magnetically coupled to the magnetic coupling layer 20 and its magnetization direction is fixed in a first direction by the magnetic coupling layer 20. The second region 10-2 is not magnetically coupled to the magnetic coupling layer 20 and its magnetization direction is a second direction that is opposite to the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.