Transistor

US8120135B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Norbert Krischke · Munich, DE
• Nicola Vannucci · Graz, AT
• Sven Lanzerstorfer · Feldkirchen in Kärnten, AT
• Thomas Ostermann · Velden am Wörther See, AT
• Mathias Racki · Markt Indersdorf, DE
• Markus Zundel · Egmating, DE

Key dates

• Filing date: Feb 11, 2010
• Grant date: Feb 21, 2012
• Expiry date: Feb 11, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/10

Abstract

A transistor has a cell array with two or more transistor cells, a temperature sensor, which is integrated in the cell array or is adjacent to the cell array, and an isolation structure. The isolation structure isolates the temperature sensor from the cell array, and has an isolation trench, which is arranged between the cell array and the temperature sensor. The distance between the temperature sensor and the active transistor cell that is closest to the temperature sensor corresponds approximately to the pitch between active transistor cells within the cell array.